P‐20: Memory Window and Endurance Improvement of In‐Ga‐Zn‐O‐Based Ferroelectric Thin Film Transistors by Inserting In‐Ga‐Zn‐O Floating Gate

We prepared oxide semiconductor‐based ferroelectric thin‐film transistors (FeTFTs) with a floating gate for memory application. Depositing oxide semiconductor on HfZrO x (HZO) as a floating gate successfully induced a polar orthorhombic phase with a larger memory window and higher endurance than conventional floating gate material TiN.