Synaptic Behaviors Mimicked in Low‐voltage P‐type CuI Neuromorphic Transistors

Neurons are the basic units of the human brain that receive and process external stimuli. The synapse is a vital part of the connection between neurons. Short‐term plasticity (STP) allows synapses to perform neural signal processing and neural computation. Herein, low‐voltage (1V) electric‐double‐layer (EDL) p‐channel CuI neuromorphic transistors are fabricated by a simple solution method to mimic this type of synaptic function, and chitosan is used as the gate dielectric. It exhibits short‐term memory (STM) functions similar to biological synapses. Its electrical properties and STP by electrical impulses are investigated. An current on/off ratio of 2×10 4 , a subthreshold swing of 82 mV/dec, and a saturation field‐effect mobility of 0.12 cm 2 V ‐1 s ‐1 are obtained in this synaptic transistor. Such low‐voltage EDL p‐type CuI thin film transistors (TFTs) gated by chitosan can be used as artificial synapses, and excitatory postsynaptic current (EPSC) and STP function analogous to human learning behavior are demonstrated. These results provide new ways to enhance the functionality of next‐generation synaptic devices. This article is protected by copyright. All rights reserved.