Self-assembling formation of Si-QDs on SiO2 line patterns

Abstract The lateral growth of Si-quantum dots (QDs) on line-patterned SiO 2 from the thermal decomposition of pure monosilane (SiH 4 ) has been systematically examined. We confirmed that the Si-QDs diameter in the line direction of the SiO 2 patterns has the same growth rate as the SiO 2 thin film surface without the line patterns. Moreover, it has been found that in the growth of Si-QDs in the width direction, a surface migration of Si precursors adsorbed from space regions could contribute to dots growth on line-patterned SiO 2 , which results in an elliptical growth. Furthermore, we have demonstrated a one-dimensional arrangement of highly dense-elliptical shaped Si-QDs with high uniformity in size by controlling line width, CVD time, and temperature.