Charge Transport Characteristics in Nitrogen doped Carbon Quantum Dots Memristor

Traditional memory technologies are unable to meet the needs of current processing and information storage requirements due to their volatility and latency. Since the discovery of the fourth passive component memristor, it has become one of the promising candidates for future memory computing. A memristor is a non-volatile, low-power consuming and fast in-memory processing unit. In recent years, Carbon quantum dots have been anticipated to become one of the prominent innovative functional active layer for memristor device applications. Here, we report a novel cost-effective, powered single-layered Nitrogen Doped Carbon Quantum Dots (NCQDs) memristive device. The NCQDs are drop-cast on transparent FTO (Fluorine Doped Tin Oxide) as bottom and silver (Ag) as top electrodes. The current-voltage measurements performed on the FTO/NCQDs device show the two orders of bipolar resistive switching (RS) with SET at -0.60 V and RESET at 1V. The further understand the mechanisms of RS, the charge transport properties of the devices were investigated. It was found RS is dominated by space charge limited current (SCLC) conduction enhanced due to electron trapping and detrapping properties indicating physical reconfiguration within the NCQDs.