Highly conductive and broadband transparent Zr‐doped In2O3 as the front electrode for monolithic perovskite/silicon tandem solar cells

Abstract Perovskite/silicon tandem solar cells show great potential for commercialization because of their high power conversion efficiency (PCE). The optical loss originated from the transparent electrode is still a challenge to further improve the PCE of perovskite/silicon tandem solar cells. Here, we developed zirconium‐doped indium oxide (IZrO), a material with low resistivity and high transmittance sputtered at room temperature. It possesses a high mobility of 29.6 cm 2 /(V·s), a low resistivity of 3.32 × 10 −4 Ω·cm, and a low sheet resistance of 25.55 Ω·sq −1 as well as a high average transmittance of 81.55% in a broadband of 400–1200 nm. Moreover, the work function (W F = 4.33 eV) matches well with the energy level of Ag electrode and SnO 2 buffer layer in the P‐I‐N type tandem device. Compared with the previous zinc‐doped indium oxide (IZO) transparent electrode device, the absolute efficiency of perovskite/silicon tandem devices based on IZrO electrode is about 0.6% higher. The champion P‐I‐N type perovskite/silicon tandem solar cells employing IZrO as the front conducts show efficiency of 28.28% (area of 0.5036 cm 2 ).