Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K0.5Na0.5NbO3 epitaxial thin films with superdomain structures

铁电性 材料科学 压电 电介质 凝聚态物理 薄膜 极化(电化学) 压电系数 纳米技术 光电子学 复合材料 物理 化学 物理化学
作者
Meng‐Jun Zhou,Bo Wang,Kun Peng,Hanxing Liu,Long‐Qing Chen,Ce‐Wen Nan
出处
期刊:Acta Materialia [Elsevier]
卷期号:248: 118777-118777 被引量:15
标识
DOI:10.1016/j.actamat.2023.118777
摘要

Size effects of mesoscale ferroelectric domains on the macroscopic dielectric and piezoelectric responses in domain-engineered bulk piezocrystals have been extensively studied for more than two decades. However, less is known about the domain size effects in ferroelectric epitaxial thin films, especially for films consisting of low-symmetry ferroelectric phases and exhibits hierarchical superdomain structures. Herein, using phase-field simulations, we systemically evaluate the effective out-of-plane dielectric and piezoelectric coefficients, κ33* and d33*, as a function of the domain periods for two types of superdomain structures in ferroelectric K0.5Na0.5NbO3 epitaxial thin films. In one type of the superdomain structures, we find that more than 70% increase of κ33* and nearly 20% increase of d33* can be achieved by tuning the domain period by a few tens of nanometers. Dissimilar behaviors are found when the domain period varies along different lateral directions, suggesting anisotropic domain size effects in thin films. By analyzing the local dielectric and piezoelectric responses from each domain variants and domain walls, we reveal that the domain size effect is governed by the variation of out-of-plane polarization inside the domains. Moreover, we also demonstrate enhanced domain size effects by modulating the misfit strains and temperature to approach the polymorphic phase boundaries, suggesting tunability of the size effect by doping and strain engineering. Our results reveal multimodal domain size dependence of dielectric and piezoelectric responses in low-symmetry ferroelectric epitaxial thin films, implying that domain size engineering can be used to tune macroscopic properties of thin-film ferroelectrics, similar to their bulk counterparts.
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