2D‐SnS‐Embedded Schottky Device with Neurotransmitter‐Like Functionality Produced Using Proximity Vapor Transfer Method for Photonic Neurocomputing

材料科学 光子学 纳米技术 光电子学
作者
Naveen Kumar,Malkeshkumar Patel,Thanh Tai Nguyen,Jung‐Hyun Lee,Chanhyuk Choi,P. K. Bhatnagar,Joondong Kim
出处
期刊:Advanced Materials [Wiley]
标识
DOI:10.1002/adma.202411420
摘要

Neuromorphic computing, which involves the creation of artificial synapses capable of mimicking biological brain activity, has intrigued researchers in the field of artificial intelligence (AI). To advance neuromorphic computing, a highly efficient 2D material-based artificial synapse capable of performing logical and arithmetic operations must be developed. However, fabricating large, uniform films or high-quality structures of 2D materials remains challenging because of their multistep and complex fabrication processes. In the present study, to produce large (Ø ≈ 3 in.), uniform, transparent neuromorphic devices, a novel single-step approach called proximity vapor transfer (PVT) that utilizes van der Waals (vdW) materials is employed. This single-step technique, which involves the fabrication of vdW materials on various substrates (glass, ITO, AZO, Mo, and Cu), allows control of the thickness and bandgap tunability. The Schottky device developed via the PVT method using vdW SnS with neurotransmitter (acetylcholine)-like functionality emulates biological synapses and exhibits photoelectronic synaptic behavior with wide-field-of-view synaptic plasticity. In addition, logic gate operations (NOT, OR, AND), reward-cascade neurotransmission, and imaging can be performed using 3 × 3 arrays of the device. This study represents a significant step toward the development of transparent and large-area synaptic devices, which are crucial for advancing AI applications.
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