材料科学
氧化铟锡
异质结
光电子学
丝网印刷
氧化锡
导电体
透明导电膜
接触电阻
化学工程
退火(玻璃)
制作
阴极
太阳能电池
氧化物
纳米技术
兴奋剂
硅
电极
薄膜
复合材料
图层(电子)
冶金
电气工程
化学
物理化学
工程类
医学
替代医学
病理
作者
Tappei Nishihara,Kazuo Muramatsu,Kyotaro Nakamura,Yoshio Ohshita,Satoshi Yasuno,Hiroki Kanai,Yutaka Hara,Yusuke Hibino,Haruki Kojima,Atsushi Ogura
标识
DOI:10.1149/2162-8777/abffae
摘要
We evaluated the fill factor (FF) degradation mechanism in silicon heterojunction (SHJ) solar cells with high mobility In 2 O 3 film as a high carrier mobility transparent conductive oxide (TCO) film. In particular, we focused on the electrode formation using a high productive screen-printing technique. We found the In 2 O 3 film is easier to be reduced than the traditional TCO such as tin-doped indium oxide (ITO). Thus, the Ag atom inside the electrode is easily oxidized during the cure annealing process and results in higher contact resistance at electrode/TCO interface and deteriorate FF characteristic. We introduced novel cation catalyst additive for paste polymerization which is less reactive with In 2 O 3 and improve the contact resistance by suppressing the silver oxidation. We also demonstrated SHJ cell fabrication and prove the effect of the developed silver paste.
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