Near‐Infrared Light Emission from a GaN/Si Nanoheterostructure Array

A near-infrared (NIR) light-emitting diode is fabricated by constructing a GaN/Si nanoheterostructure array by growing GaN nanograins onto a silicon nanoporous pillar array (Si-NPA). A strong and tunable NIR electroluminescence is observed and the luminescent mechanism is attributed to the carrier radiative recombination occurring at the interface between GaN and Si-NPA.