材料科学
晶体管
碳纳米管
薄膜晶体管
磁滞
光电子学
电子迁移率
碳纳米管场效应晶体管
电容器
萃取(化学)
半导体
频道(广播)
电子工程
场效应晶体管
纳米技术
电压
电气工程
凝聚态物理
图层(电子)
物理
工程类
化学
色谱法
作者
Zhiying Liu,Zhijun Qiu,Zhibin Zhang,Li‐Rong Zheng,Shi‐Li Zhang
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2011-07-01
卷期号:32 (7): 913-915
被引量:16
标识
DOI:10.1109/led.2011.2149494
摘要
An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.
科研通智能强力驱动
Strongly Powered by AbleSci AI