三元运算
Crystal(编程语言)
兴奋剂
晶格能
格子(音乐)
结晶学
晶格常数
材料科学
霍尔效应
极性(国际关系)
活化能
晶体结构
键能
凝聚态物理
化学
电阻率和电导率
物理化学
光学
分子
物理
衍射
有机化学
量子力学
生物化学
程序设计语言
细胞
光电子学
计算机科学
声学
作者
J. Horák,K. Čermák,Ladislav Koudelka
标识
DOI:10.1016/0022-3697(86)90010-7
摘要
The free carrier concentration of the Sb2−xInxTe3, Bi2−xInxTe3 and Bi2Te3−xSx crystals has been determined from the values of the Hall constants and the free carrier concentration of the Sb2−xTlxTe3 has been calculated from the plasma resonance frequency; with increasing value of x, the hole concentration decreases. As the incorporation of the elements In, Tl and S into the lattice Sb2Te3 or Bi2Te3, respectively, gives rise to the uncharged defects InxSb, TlxSb, InxBi and SxTe, the x causes the decrease of the antisite defects concentration. The proven effect is explained in the following way: the antisite defects can be created only in crystals whose atoms are bound by weakly polarized bonds. The incorporation of In, Tl and S atoms into the crystal lattice of Sb2Te3 or Bi2Te3 increases the bond polarity, the ionicity of ternary crystals increases. This unfavorably affects the increase of antisite defects whose concentration decreases. The change of the bond polarity is considered from the changes discovered in the formation energy of antisite defects of the above mentioned ternary crystals.
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