BEOL-compatible Te-TeOx p-FETs with channel length down to 50 nm at cryogenic temperatures

In this work, we present p-type Te-TeOx FETs with BEOL-compatibility targeting high-performance computing at cryogenic temperatures. The devices feature aggressively scaled channel lengths (Lch of 50 nm) deposited using the sputtering method that is cost-effective, large-scale manufacturable, and highly controllable. We investigated the effects of oxygen content and film thickness in the sputtered channel layer on device performance. The device achieves a maximum transconductance (Gm, max) of 142 μS/μm, an on/off ratio exceeding 3 × 108, a subthreshold swing (SS) of 99 mV/Dec., a high hole mobility of 28.6 cm2/V s, and excellent NBTI and PBTI reliability characteristics at 77 K.