磁矩
磁性
密度泛函理论
凝聚态物理
居里温度
基态
铁磁性
晶格常数
材料科学
带隙
自旋电子学
电子结构
物理
原子物理学
光学
衍射
量子力学
作者
Abdelazim M. Mebed,Muhammad Mushtaq,Iltaf Muhammad,Ikram Un Nabi Lone,Samah Al‐Qaisi,Norah Algethami,E. F. El-Shamy,A. Laref,Najm M. Al-Hosiny
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2022-12-05
卷期号:98 (1): 015807-015807
被引量:22
标识
DOI:10.1088/1402-4896/aca56b
摘要
Abstract Half-metallic (HM) ferromagnets (HM-FMs) with large HM gap and high Curie temperature (T C ) have a great importance in the field of spintronics. In this study, the geometric features, electronic structure and magnetism of two new double perovskites (DPs) represented by Rb 2 XMoO 6 (X = Cr, Sc) were explored in bulk phase and (001) surface using quantum mechanical total energy calculations based on density functional theory (DFT). The results showed that optimized lattice constant a is 7.96 Å and 8.26 Å for Rb 2 CrMoO 6 (RCMO) and Rb 2 ScMoO 6 (RSMO), respectively, in the cubic phase (space group Fm-3m, #225). The cohesive energy E coh , formation energy E for and elastic constants (mechanical) calculations proved that present materials are stable. The magnetic properties were explored in terms of ground state magnetic coupling, total magnetic moment (M) and atomic magnetic moment (m), exchange energy (J), and Curie temperature. It was found that both materials have ferromagnetic coupling in the ground state, with M of integer value of 8.0 μ B (4.0 μ B ), J value of 47 meV(72 meV) and T C of 365 K (557 K) in Rb 2 CrMoO 6 (Rb 2 ScMoO 6 ). The electronic properties computed with electronic band structure and density of states demonstrated both DPs to be half-metal with HM gap of 1.61 eV (2.1 eV) in Rb 2 Cr-based (Rb 2 Sc-based) system. Finally the electronic and magnetic properties of (001) surfaces were investigated and compared with that of bulk phase. Interestingly, bulk HM property was retained in RSMO, but disappeared in RCMO due the emergence of defect states at Fermi level (E F ). The reported results suggest that Rb-based DPs carry some fascinating properties for spin-based devices.
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