材料科学
兴奋剂
三元运算
溅射
导电体
溅射沉积
透射率
透明导电膜
光电子学
基质(水族馆)
薄膜
无线电频率
纳米技术
复合材料
电信
地质学
海洋学
程序设计语言
计算机科学
作者
Longfei Xing,Yangdan Lu,Yunze Liu,Fengzhi Wang,Li Zhu,Xinhua Pan,Zhizhen Ye
标识
DOI:10.1016/j.matlet.2024.135972
摘要
Ga/Mg/F ternary-doped ZnO transparent conductive films were prepared by radio-frequency (RF) magnetron sputtering. The influences of RF power, work pressure, and substrate temperature on the films are studied. The electrical and optical properties, structure and surface morphology of the films are discussed. Compared to other doped systems, the deposited films in this work exhibit excellent electrical and optical properties (ρ: 4.79 × 10−4 Ω·cm, T: 91.4 %), which is comparable to commercial ITO. Besides, the films with the best performance show good stability. Our work has verified the advantages of triple-doped ZnO transparent conductive films, which is meaningful for future research and applications.
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