极紫外光刻
平版印刷术
极端紫外线
节点(物理)
计算机科学
多重图案
介绍(产科)
工程物理
材料科学
光学
抵抗
工程类
光电子学
物理
纳米技术
医学
图层(电子)
放射科
激光器
结构工程
作者
Kurt Ronse,R. Jonckheere,Emily Gallagher,Vicky Philipsen,Lieve Van Look,Eric Hendrickx,Ryan Ryoung Han Kim
摘要
As it has been widely announced by the leading foundries, and confirmed by ASML, EUV Lithography is being introduced into high volume manufacturing (HVM) since the beginning of this year, in order to enable a more cost-effective manufacturing for the 7nm logic technology node. Very soon, the next technology node will be introduced and the number of EUV layers at 5nm is expected to increase significantly. Although EUV masks are not regarded as the first critical issue for EUV introduction into HVM, several items with respect to EUV masks need more time for improvements, certainly for 5nm and beyond. This presentation will address several mask related items such as EUV pellicle, alternative absorber, EUV mask lifetime, etc... and finally anamorphic masks. This paper is reviewing the status and outlook for these remaining challenges.
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