光电二极管
探测器
红外线的
点间距
光电子学
暗电流
量子效率
像素
工作温度
材料科学
物理
光电探测器
波长
红外探测器
光学
响应度
基点
碲化镉汞
热力学
作者
S. Hanna,D. Eich,K.-M. Mahlein,Wolfgang Fick,W. Schirmacher,R. Thöt,J. Wendler,H. Figgemeier
标识
DOI:10.1007/s11664-016-4523-4
摘要
We present our latest results on n-on-p as well as on p-on-n low dark current planar mercury cadmium telluride (MCT) photodiode technology long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) two-dimensional focal plane arrays (FPAs) with quantum efficiency (QE) cut-off wavelength >11 μm at 80 K and a 512 × 640 pixel format FPA at 20 μm pitch stitched from two 512 × 320 pixel photodiode arrays. Significantly reduced dark currents as compared with Tennant’s “Rule 07” are demonstrated in both polarities while retaining good detection efficiency ≥60% for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at 20 K higher operating temperature than with previous AIM INFRAROT-MODULE GmbH (AIM) technology. For p-on-n LWIR MCT FPAs, broadband photoresponse nonuniformity of only about 1.2% is achieved at 55 K with low defective pixel numbers. For an n-on-p VLWIR MCT FPA with 13.6 μm cut-off at 55 K, excellent photoresponse nonuniformity of about 3.1% is achieved at moderate defective pixel numbers. This advancement in detector technology paves the way for outstanding signal-to-noise ratio performance infrared detection, enabling cutting-edge next-generation LWIR/VLWIR detectors for space instruments and devices with higher operating temperature and low size, weight, and power for field applications.
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