Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles

Recently, the wide bandgap semiconductors, especially silicon carbide (SiC), have become more important due to the unique electrical and thermophysical properties that make them applicable to a variety of electronic devices (Schottky and PiN diodes, JFETs, MOSFETs, etc.). For these applications, the crystals need to be manufactured with highest possible quality, both structural and chemical, at reduced cost. This requirement places rather extreme constraints on the crystal growth as the simultaneous goals of high quality and low cost are generally incompatible.Refractory metal carbide technology, particularly, tantalum carbide (TaC), was originally developed for application in highly corrosive and reactive environments. Yu. Vodakov [1] demonstrated for the first time advantages of use of refractory metal carbides for PVT growth of SiC and later AlN bulk crystals. In the present paper we discuss the effect of refractory metal on PVT growth of large diameter 4H SiC bulk crystals.