光致发光
铟
纳米线
透射电子显微镜
材料科学
扫描电子显微镜
氧化物
衍射
蒸发
光电子学
纳米技术
分析化学(期刊)
化学工程
光学
化学
冶金
复合材料
物理
工程类
色谱法
热力学
作者
Ping Wu,Qiang Li,Chuanxi Zhao,D.L. Zhang,Chi Ling-Fei,Tan Xiao
标识
DOI:10.1016/j.apsusc.2008.09.032
摘要
Indium oxide nanowires have been successfully synthesized by carbonthermal evaporation method. The morphology, composition and structure of the as-prepared nano-products were characterized by scanning electron microscope, energy-dispersive spectroscope (EDS), X-ray diffraction (XRD) and transmission electron microscopy (TEM), respectively. Photoluminescence is also measured at room temperature and the spectrum shows the deep-level and near-band-edge emission. Finally, the growth mechanism and the origination of visible emission are discussed. The study is helpful for the future application of In2O3 nanowires in optoelectronic devices.
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