光电探测器
光探测
半导体
材料科学
光电效应
异质结
光电子学
纳米技术
半导体材料
工程物理
物理
作者
Feng Teng,Kai Hu,Weixin Ouyang,Xiaosheng Fang
标识
DOI:10.1002/adma.201706262
摘要
Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.
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