An Electrical Transient Model of IGBT-Diode Switching Cell for Power Semiconductor Loss Estimation in Electromagnetic Transient Simulation

An electrical transient model (ETM) of insulated-gate bipolar transistor (IGBT)-diode switching cell is developed by coupling a temperature-dependent IGBT model with power loss model. The nonlinear behavior of IGBT and the reverse recovery characteristic of the diode are considered in this model to simulate the transient switching waveforms. Based on the transient waveforms of ETM under various operating conditions, the power loss estimation method (PLEM) for IGBT is developed. In addition to traditional modeling techniques that only uses ideal switch, this paper uses the model to replicate the power loss behaviors of semiconductor devices in circuit simulation by looking up tables. The proposed ETM is simulated in PSCAD/EMTDC with nanosecond time step, whereas the overall system application can be simulated with conventional time step in range of microsecond. By this way, the model can promise reasonable accuracy as well as an acceptable fast solving speed. The proposed ETM and PLEM have been implemented in PSCAD/EMTDC simulator and validated by experimental results using a double pulse test bench and boost converter test platform.