量子点
钙钛矿(结构)
太阳能电池
降级(电信)
材料科学
光伏系统
纳米技术
光电子学
工程物理
计算机科学
物理
化学工程
生物
工程类
电信
生态学
作者
Seonghye Lim,Sang‐Hun Han,Dohyun Kim,Jihyun Min,Jongmin Choi,Taiho Park
标识
DOI:10.1002/adma.202203430
摘要
Abstract The power conversion efficiency of CsPbI 3 perovskite quantum dot (PQD) solar cells shows increase from 10.77% to 16.2% in a short period owing to advances in material and device design for solar cells. However, the device stability of CsPbI 3 PQD solar cells remains poor in ambient conditions, which requires an in‐depth understanding of the degradation mechanisms of CsPbI 3 PQDs solar cells in terms of both inherent material properties and device characteristics. Along with this analysis, advanced strategies to overcome poor device stability must be conceived. In this review, fundamental mechanisms that cause the degradation of CsPbI 3 PQD solar cells are discussed from the material property and device viewpoints. In addition, based on detailed insights into degradation mechanisms in CsPbI 3 PQD solar cells, various strategies are introduced to improve the stability of CsPbI 3 PQD solar cells. Finally, future perspectives and challenges are presented to achieve highly durable CsPbI 3 PQD solar cells. The investigation of the degradation mechanisms and the stability enhancement strategies can pave the way for the commercialization of CsPbI 3 PQD solar cells.
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