Simultaneous visible and ultraviolet photoresponse improvement of MoS2/ZnO heterostructure photodetector via direct resonant coupling of Au nanoparticles localized surface plasmon resonance

光电探测器 材料科学 光电子学 表面等离子共振 紫外线 光电流 异质结 可见光谱 响应度 等离子体子 纳米颗粒 表面改性 表面等离子体子 量子效率 共振(粒子物理) 纳米技术 化学 物理 物理化学 粒子物理学
作者
Jian Zhang,Xinglai Zhang,Jing Li,Z.Y. Ma,Bing Leng,Qi Xia,Loren Shen,Yandong Song,Zhengwei Fu,Siyu Feng,Lizhi Feng,Zitong Liu,Sh. U. Yuldashev,Xin Jiang,Baodan Liu
出处
期刊:Optical Materials [Elsevier BV]
卷期号:124: 111997-111997 被引量:14
标识
DOI:10.1016/j.optmat.2022.111997
摘要

Localized surface plasmon resonance (LSPR) as a unique property of metal nanoparticles (NPs) has been widely applied to enhance the performance of optoelectronic devices. However, limited by the specific resonance frequency of plasmonic NPs, the LSPR of NPs can only improve the photoresponse performance of photodetectors at specific wavelength. In this work, a simple strategy is proposed to simultaneously improve the performance of the p-MoS2/n-ZnO heterostructure photodetector in visible and ultraviolet (UV) light regions by modifying Au NPs. The Ilight/Idark ratio of the photodetector is considerably increased after the functionalization with plasmonic Au NPs under visible and UV light illumination due to the direct resonant coupling of LSPR. In particular, the photocurrent of the photodetector increases 14.8 times after Au NPs modification under 532 nm illumination, giving rise to an obvious increase in responsivity, external quantum efficiency and specific detectivity. Moreover, the modification of Au NPs facilitates the rapid separation of electrons and holes due to the generation of surface depletion regions located at Au/MoS2 and Au/ZnO interfaces. Consequently, the photoresponse speed is also drastically improved after Au NPs decoration in both visible and ultraviolet light regions. The strategy of direct resonant coupling of Au NPs LSPR with two photosensitive materials proposed in this work will provide a new avenue for optimizing the performance of optoelectronic devices.
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