锌
材料科学
铟
原子层沉积
兴奋剂
蓝宝石
图层(电子)
分析化学(期刊)
光致发光
化学气相沉积
核化学
光电子学
纳米技术
化学
有机化学
光学
冶金
物理
激光器
作者
Chi-Ying Hsiao,Jing-Hsung Yang,Jyh-Rong Gong,Dong-Yuan Lyu,Tai‐Yuan Lin,Chengtao Lu,Der-Yuh Lin
标识
DOI:10.1109/inec.2010.5424867
摘要
Indium-doped zinc oxide (IZO) films were deposited on (11–20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N 2 O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72×10 −4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.
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