CMOS芯片
组合逻辑
晶体管
电子工程
数字电子学
逻辑门
电子线路
辐射硬化
集成注入逻辑
电气工程
通流晶体管逻辑
计算机科学
集成电路设计
工程类
探测器
电压
作者
M.P. Baze,S. Büchner,Dale McMorrow
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2000-12-01
卷期号:47 (6): 2603-2608
被引量:121
摘要
A new cell design technique is described which may be used to create SEU hardened circuits. The technique uses actively biased, isolated well transistors to prevent transients in combinational logic from reaching the output node.
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