材料科学
薄脆饼
吞吐量
剪应力
压力(语言学)
剪切(地质)
复合材料
光电子学
计算机科学
电信
语言学
哲学
无线
作者
Zsolt Kovács,Csanád Ö. Boros,Teodóra N. Kovács,Zsolt Kovács,Z. Csapo Kiss
标识
DOI:10.1016/j.mssp.2024.108449
摘要
Defect inspection methods are basic steps in electronic chip manufacturing and power device production processes in the semiconductor industry. Based on stress induced photoelastic anisotropy, in-line polarized stress imaging (PSI) and quantitative determination of the local shear stress component are possible in single crystalline silicon wafers. Hereafter, such polarization stress images are compared and validated quantitatively with results of finite element simulations based on different 3D elastic models. Uniquely, high resolution at high throughputs is achieved for 300 mm wafer size in the present quantitative stress imaging study.
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