Micro-cracks Generation and Growth Manipulation by All-Laser Processing for Low Kerf-loss and High Surface Quality SiC Slicing

Low kerf-loss and high surface quality silicon carbide (SiC) wafer slicing is key to reducing cost, improving productivity, and extending industrial applications. In this paper, a novel all-laser processing approach is proposed by combining laser micro-cracks generation and growth manipulation. The first high fluence pulsed laser is applied to generate micro-cracks inside SiC, which increases its laser energy absorption. The second low fluence pulsed laser achieves the manipulation of micro-cracks growth and interconnection to separate SiC wafer. The optimal laser processing parameters are obtained to separate a 4H-SiC substrate at a thickness of 500 µm. The sliced surface is clean with average surface roughness (Sa) of 186 nm, standard deviation of 0.037, and kerf-loss of 915 nm. This laser slicing approach can be applied for high-hardness transparent material separation.