激光线宽
材料科学
激光器
光电子学
半导体
光学
半导体激光器理论
磁强计
物理
磁场
量子力学
作者
Mengying Wu,Haiyang Yu,Wenyu Wang,Shaojie Li,Yuan-Ying Cao,Jianguo Liu
出处
期刊:Photonics
[MDPI AG]
日期:2023-08-15
卷期号:10 (8): 934-934
被引量:1
标识
DOI:10.3390/photonics10080934
摘要
A 1083 nm laser, corresponding to a characteristic spectral line of 3He 23S1-23P, is the core light source for spin-exchange optical pumping-free technology, and thus has important developmental significance. In this paper, precise wavelength 1083.34 nm semiconductor lasers with 285 mW output power, −144.73 dBc/Hz RIN noise and 30.9952 kHz linewidth have been successfully achieved via reasonable chips design, high-quality epitaxial growth process and ultra-low reflectivity coating fabrication. All the results show the highest output power and ultra-narrow linewidth of the single-frequency 1083 nm DFB semiconductor laser achieved in this paper, which can fully satisfy the requirement of quantum magnetometers.
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