CMOS芯片
晶体管
缩放比例
纳米技术
纳米电子学
电子工程
材料科学
电气工程
计算机科学
工程类
电压
数学
几何学
作者
Arighna Basak,Writam Banerjee,Avtar Singh,Avik Chakraborty,Manash Chanda
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2023-01-01
卷期号:: 263-303
标识
DOI:10.1016/b978-0-323-91832-9.00014-2
摘要
Complementary metal oxide semiconductor (CMOS) transistors have already reached their fundamental scaling limits and, therefore, it is difficult to scale them further, primarily due to the challenges concerning various quantum mechanical effects. This chapter aims to provide a detailed analysis and comparison of different emerging non-CMOS nano-electronic devices that could potentially help address the CMOS scaling problem. Emerging nanodevices are classified according to their physical phenomenon, finding applications in electrical, magnetic, mechanical, or charge-based nanodevices. Different classes of emerging non-CMOS nanoscale devices that expand beyond the present CMOS scaling limits are presented with their structure, advantages, disadvantages, and potential applications.
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