带隙基准
温度系数
双极结晶体管
比克莫斯
电压基准
电气工程
材料科学
电压
带隙
光电子学
共发射极
电源抑制比
补偿(心理学)
噪音(视频)
晶体管
计算机科学
工程类
开关电源
跌落电压
图像(数学)
人工智能
精神分析
心理学
作者
Jiapeng Shen,Shengxi Diao
标识
DOI:10.1109/cisp-bmei56279.2022.9980043
摘要
In this paper, a bandgap voltage reference (BGR) with low temperature coefficient (TC) and high power supply rejection (PSR) is proposed. To obtain a low TC, an exponential compensation circuit is inserted to the BGR, which calibrate the high-order temperature coefficient of the base-emitter voltage $V_{BE}$ in bipolar transistor. A PSR enhancement stage is inserted to suppress supply noise. In the post-layout simulation, TC is 0.2 ppm/°C over −55°C to 125 °C and the PSR is −71.4dB@100KHz and −70.2dB@1MHz. Fabricated in 0.18um BiCMOS technology, the proposed bandgap voltage reference obtain an active area of 125um x 83um.
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