The filaments control for tunning digital resistive switching in data storage application and analog behavior as an artificial synapse with CsPbBr3-based memristor

Implementation of tunable digital and analog resistive switching (RS) behaviors for memristors is crucial toward their development in data storage and energy-efficient computations. Herein, the CsPbBr3 film-based RS memristors with different switching film thickness and adaptable electrodes are constructed, which are implemented by the solution processed method. All the constructed memristors demonstrate stable bipolar switching behaviors, and in special, the gradual analog RS behavior with multi-level conductance is observed for the thin memristor, making it as the promising artificial synapse. As a comparison, the thick memristor demonstrates digital abrupt RS behavior, accompanying with a high memory window (>103), which can be applied in data storage field. Furthermore, the evolution of conductive filaments, stemming from synergetic bromine vacancies and aluminum atoms, is proposed to clarify the distinguished dynamic changes in the RS process. This work provides an optimization strategy to tune RS behavior for CsPbBr3-based RS memristors and paves the way for both data storage and artificial synapse applications.