异质结
硼酚
欧姆接触
材料科学
肖特基势垒
光电子学
空位缺陷
肖特基二极管
电场
吸收(声学)
堆积
凝聚态物理
纳米技术
化学
图层(电子)
石墨烯
物理
二极管
量子力学
有机化学
复合材料
作者
Danni Wang,Yu Wang,Zelong Ma,Baoan Bian,Bin Liao
标识
DOI:10.1016/j.mseb.2023.117137
摘要
We investigate the electronic and optical properties of MoSSe/borophene heterojunctions by first principles. Two different structures of borophene and several different stacking layers are considered. The heterojunctions of SeMoS/H, SMoSe/H, and SMoSe/β exhibit the p-type Schottky contacts, while SeMoS/β presents a n-type Schottky contact. When the external electric field is applied to heterojunctions, the Ohmic contact is achieved for SeMoS/H and SMoSe/H. The introduction of S and Se vacancy defects reduces the Schottky barrier height. The heterojunctions of SeMoS/H-VS and SMoSe/H-VS exhibit the Ohmic contact. Moreover, the optical absorption of heterojunctions with vacancy defects has been significantly enhanced, and SeMoS/β-VS has the maximum optical absorption coefficient of 2.35 × 104 cm−1. Our results can provide some guidance for the widespread application of two-dimensional heterostructures in tunable nanoelectronics devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI