Enhancing interfacial thermal transport efficiently in diamond/graphene heterostructure by involving vacancy defects

The enhancement of interfacial thermal conductance is critical to the efficient heat dissipation in micro- and nano- devices. The introduction of defects is a special method to improve the interfacial thermal conductance. For diamond/graphene heterostructure, the effects of defects in graphene and diamond on interfacial thermal conductance are investigated by molecular dynamics simulation. The increasing of defects in graphene causes the interfacial thermal conductance decreasing first and then increasing. The interfacial thermal conductance will remarkably rise with the increasing of the radius and number of vacancy defects in diamond. The thermal transport process at the interface experiences three stages according to the overlap energy of diamond and graphene. The mechanism of vacancy defect effectively enhancing interfacial thermal conductance is explained by interfacial modes of phonon density of states. The progress made so far could provide a special idea and guidance for improving heat dissipation for micro- and nano-devices.