Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition

The study on the uniformity of electrical performance of large wafer-scale Hf0.5Zr0.5O2 (HZO) ferroelectric capacitors is still lacking yet now. In this work, TiN/HZO/TiN metal-ferroelectric-metal (MFM) devices on 12-inch silicon wafers have been fabricated by thermal atomic layer deposition. The correlation of thickness uniformity with device-to-device variation of electrical properties and yield of the 12-inch MFM system was investigated. It was found that the uniformity of ferroelectric properties is closely related to the variation of HZO thickness of the MFM system, the concentration of oxygen vacancies in the micro-region of the HZO film, and the ferroelectric phase micro-distribution on 12-inch Si wafer. This work provides some important information for the performance optimization of HfO2-based ferroelectric random access memories.