响应度
光电探测器
暗电流
材料科学
光电子学
电流(流体)
电气工程
工程类
作者
Shuai Zhang,Tong Liu,Jianxiao Wang,Yongfu Li,Guoqing Lin,Maria Vasilopoulou,Junhao Chu,Qingbo Meng,Xichang Bao
标识
DOI:10.1002/adom.202400328
摘要
Abstract Organic photodetectors (OPDs) have attracted immense interest as solution‐processable optical signal‐capturing devices due to their various advantages, such as adjustable response range, excellent weak light response, lightweight, flexibility, and ease of processing on diverse substrates. Low dark current density ( J d ) and high responsivity ( R ) are key requirements necessary for achieving a high specific detectivity ( D *). Here, an effective strategy for preparing high‐performance OPDs with potential micro p‐i‐n structure by introducing insulating poly(aryl ether) (PAEN) into the organic photosensitive layer is reported. The PM6:PC 71 BM‐based OPDs are capable of significantly suppressing J d while increasing R , which can be attributed to the multiple optimizations of morphology and charge transport caused by the addition of PAEN. As a result, the value of J d (3.63 × 10 −10 A cm −2 ) is two orders of magnitude lower than that of the device without PAEN (1.00 × 10 −8 A cm −2 ) at −1 V bias. Combined with the increased R of 0.376 A W −1 , the optimized device achieves a high D *of 3.45 × 10 13 Jones (−1 V at 620 nm). The optimized OPDs demonstrate high performance that is comparable to commercial Si photodetectors (Hamamatsu S1133), paving the way for the direct market development of this cost‐effective organic photodetection technology.
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