Importance of Bi–O Bonds at the Cs2AgBiBr6 Double-Perovskite/Substrate Interface for Crystal Quality and Photoelectric Performance

Interface interactions between perovskite materials and substrates are of great significance for the development of high-quality perovskite materials. Herein, we have successfully prepared Cs2AgBiBr6 double-perovskite films via a one-step spin-coating process and demonstrated a novel approach that modifies the surface of substrates with an ultrathin metal oxide (MOx) layer to promote the film quality and photoelectric performance. Characterization results strongly suggest that the improvement is attributed to the Bi–O interfacial interaction at substrate/perovskite interface. Benefiting from this interface interaction, the average grain size of Cs2AgBiBr6 films has remarkably risen up to ∼500 nm, which is nearly four times larger than the one directly deposited on a commercial fluorine-doped tin oxide substrate. Meanwhile, the pin hole surface area ratio has reduced from 2.61 to 0.60%. Furthermore, the corresponding photodetectors (PDs) have been fabricated and the performance has significantly improved owing to the enhanced Cs2AgBiBr6 film quality. The on–off ratio of the optimized PD has a boost of almost 10 times. In addition, the minimum detected irradiation has decreased from 9.7 × 10–8 to 1.9 × 10–9 W cm–2, as well as the maximum detectivity has increased from 3.3 × 1011 to 1.2 × 1013 Jones. These results suggest a feasible method for crystallization improvement of double-perovskite films and indicate promising promotion of photoelectric performance.