光电探测器
响应度
光电子学
暗电流
异质结
材料科学
光电效应
紫外线
光探测
比探测率
光学
物理
作者
Shan Li,Daoyou Guo,Peigang Li,Xia Wang,Yuehui Wang,Zuyong Yan,Zeng Liu,Yusong Zhi,Yuanqi Huang,Zhenping Wu,Weihua Tang
标识
DOI:10.1021/acsami.9b11012
摘要
Solar-blind photodetectors have captured intense attention due to their high significance in ultraviolet astronomy and biological detection. However, most of the solar-blind photodetectors have not shown extraordinary advantages in weak light signal detection because the forewarning of low-dose deep-ultraviolet radiation is so important for the human immune system. In this study, a high-performance solar-blind photodetector is constructed based on the n-Ga2O3/p-CuSCN core-shell microwire heterojunction by a simple immersion method. In comparison with the single device of the Ga2O3 and CuSCN, the heterojunction photodetector demonstrates an enhanced photoelectric performance with an ultralow dark current of 1.03 pA, high photo-to-dark current ratio of 4.14 × 104, and high rejection ratio (R254/R365) of 1.15 × 104 under a bias of 5 V. Excitingly, the heterostructure photodetector shows high sensitivity to the weak signal (1.5 μW/cm2) of deep ultraviolet and high-resolution detection to the subtle change of signal intensity (1.0 μW/cm2). Under the illumination with 254 nm light at 5 V, the photodetector shows a large responsivity of 13.3 mA/W, superb detectivity of 9.43 × 1011 Jones, and fast response speed with a rise time of 62 ms and decay time of 35 ms. Additionally, the photodetector can work without an external power supply and has specific solar-blind spectrum selectivity as well as excellent stability even through 1 month of storage. Such prominent photodetection, profited by the novel geometric construction and the built-in electric field originating from the p-n heterojunction, meets greatly well the "5S" requirements of the photodetector for practical application.
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