Exploring the high carrier mobility of newly predicted SiSe2 monolayer

The hexagonal SiSe2 monolayer is investigated to study carrier effective masses and carrier mobility. The monolayer is a semiconductor with a band gap of 0.46 eV with minima of conduction band at M and maxima of valence band between r-M indicating indirect nature of electronic band gap. The calculated value of carrier effective mass for electron is 0.116m0 and hole is 0.279m0. Moreover, the SiSe2 monolayer has a much higher electron mobility of 3.87x104 cm2V-1sec-1 when compared with MoS2 monolayer. These findings reveal SiSe2 a potential candidate for future electronics and nano-electronics.