High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

Advanced MaterialsVolume 24, Issue 43 p. 5832-5836 Communication High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared Woong Choi, Woong Choi School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, South KoreaSearch for more papers by this authorMi Yeon Cho, Mi Yeon Cho Department of Physics, Korea University, Seoul 136-713, South KoreaSearch for more papers by this authorAniruddha Konar, Aniruddha Konar Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USASearch for more papers by this authorJong Hak Lee, Jong Hak Lee Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South KoreaSearch for more papers by this authorGi-Beom Cha, Gi-Beom Cha Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, South KoreaSearch for more papers by this authorSoon Cheol Hong, Soon Cheol Hong Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, South KoreaSearch for more papers by this authorSangsig Kim, Sangsig Kim School of Electrical Engineering, Korea University, Seoul 136-713, South KoreaSearch for more papers by this authorJeongyong Kim, Jeongyong Kim Department of Physics, University of Incheon, Incheon 406-772, South KoreaSearch for more papers by this authorDebdeep Jena, Debdeep Jena Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USASearch for more papers by this authorJinsoo Joo, Corresponding Author Jinsoo Joo [email protected] Department of Physics, Korea University, Seoul 136-713, South Korea Jinsoo Joo, Department of Physics, Korea University, Seoul 136-713, South Korea Sunkook Kim, Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South Korea.Search for more papers by this authorSunkook Kim, Corresponding Author Sunkook Kim [email protected] Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South Korea Jinsoo Joo, Department of Physics, Korea University, Seoul 136-713, South Korea Sunkook Kim, Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South Korea.Search for more papers by this author Woong Choi, Woong Choi School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, South KoreaSearch for more papers by this authorMi Yeon Cho, Mi Yeon Cho Department of Physics, Korea University, Seoul 136-713, South KoreaSearch for more papers by this authorAniruddha Konar, Aniruddha Konar Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USASearch for more papers by this authorJong Hak Lee, Jong Hak Lee Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South KoreaSearch for more papers by this authorGi-Beom Cha, Gi-Beom Cha Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, South KoreaSearch for more papers by this authorSoon Cheol Hong, Soon Cheol Hong Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, South KoreaSearch for more papers by this authorSangsig Kim, Sangsig Kim School of Electrical Engineering, Korea University, Seoul 136-713, South KoreaSearch for more papers by this authorJeongyong Kim, Jeongyong Kim Department of Physics, University of Incheon, Incheon 406-772, South KoreaSearch for more papers by this authorDebdeep Jena, Debdeep Jena Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USASearch for more papers by this authorJinsoo Joo, Corresponding Author Jinsoo Joo [email protected] Department of Physics, Korea University, Seoul 136-713, South Korea Jinsoo Joo, Department of Physics, Korea University, Seoul 136-713, South Korea Sunkook Kim, Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South Korea.Search for more papers by this authorSunkook Kim, Corresponding Author Sunkook Kim [email protected] Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South Korea Jinsoo Joo, Department of Physics, Korea University, Seoul 136-713, South Korea Sunkook Kim, Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, Gyeonggi, 446-701, South Korea.Search for more papers by this author First published: 20 August 2012 https://doi.org/10.1002/adma.201201909Citations: 891Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare 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Learn more.Copy URL Graphical Abstract Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V−1s−1), near-ideal subthreshold swings (∼70 mV decade−1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination. Citing Literature Supporting Information Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_201201909_sm_suppl.pdf58.6 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume24, Issue43November 14, 2012Pages 5832-5836 RelatedInformation