石墨烯
材料科学
纳米技术
六方氮化硼
数码产品
电子结构
晶体缺陷
化学物理
原子单位
光谱学
光致发光
凝聚态物理
光电子学
化学
物理
物理化学
量子力学
作者
Jinhua Hong,Chuanhong Jin,Jun Yuan,Ze Zhang
标识
DOI:10.1002/adma.201606434
摘要
Two‐dimensional layered graphene‐like crystals including transition‐metal dichalcogenides (TMDs) have received extensive research interest due to their diverse electronic, valleytronic, and chemical properties, with the corresponding optoelectronics and catalysis application being actively explored. However, the recent surge in two‐dimensional materials science is accompanied by equally great challenges, such as defect engineering in large‐scale sample synthesis. It is necessary to elucidate the effect of structural defects on the electronic properties in order to develop an application‐specific strategy for defect engineering. Here, two aspects of the existing knowledge of native defects in two‐dimensional crystals are reviewed. One is the point defects emerging in graphene and hexagonal boron nitride, as probed by atomically resolved electron microscopy, and their local electronic properties, as measured by single‐atom electron energy‐loss spectroscopy. The other will focus on the point defects in TMDs and their influence on the electronic structure, photoluminescence, and electric transport properties. This review of atomic defects in two‐dimensional materials will offer a clear picture of the defect physics involved to demonstrate the local modulation of the electronic properties and possible benefits in potential applications in magnetism and catalysis.
科研通智能强力驱动
Strongly Powered by AbleSci AI