CMOS芯片
节点(物理)
缩放比例
逻辑门
计算机科学
电子工程
电气工程
逻辑综合
功率(物理)
计算机体系结构
工程类
物理
几何学
数学
量子力学
结构工程
作者
A. Spessot,B. Parvais,Amita Rawat,Kenichi Miyaguchi,Pieter Weckx,Doyoung Jang,Julien Ryckaert
标识
DOI:10.1109/bcicts48439.2020.9392980
摘要
In the 22nm node, FinFET has been introduced to continue CMOS Logic scaling. The continuous device shrinking needed to reach node 3nm and beyond bring us into the post FinFET era, which requires new device architectures. In this paper we review the device evolution to vertically stacked Nanosheets, Forksheet, and CFET in conjunction with buried power rails and wrap around contact. The impact of variability at scaled dimensions and the requirement for a complete CMOS platform including I/O are discussed. We then review how these elements affect the analog/RF performance of advanced devices in a holistic view.
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