X射线光电子能谱
材料科学
微晶
薄膜
钒
扫描电子显微镜
价(化学)
分析化学(期刊)
化学工程
纳米技术
化学
冶金
复合材料
色谱法
工程类
有机化学
作者
Pranav Ojha,Shrawan Mishra
出处
期刊:Journal of physics
[IOP Publishing]
日期:2021-11-01
卷期号:2070 (1): 012098-012098
被引量:1
标识
DOI:10.1088/1742-6596/2070/1/012098
摘要
Abstract Vanadium dioxides are strongly correlated systems which undergo an insulator-metal transition (IMT) from a low-temperature semiconducting phase to a high-temperature metallic phase. Among them, Vanadium dioxide (VO 2 ) undergoes IMT close to room temperature, accompanied by a structural transition resulting change of several orders of magnitude in the electrical and optical properties. Here, we present the synthesis of VO 2 by sol-gel process which employs cost-effective precursors to synthesize pure phase of VO 2 thin films. The synthesized thin films were characterized using an X-ray diffraction (XRD) to confirm phase purity and high resolution scanning electron microscope (HR-SEM) to study the crystallite and particle size for the synthesized films. The film’s surface was analyzed by X-ray photoelectron spectroscopy (XPS) to determine the valence state and chemical composition of vanadium dioxide.
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