收发机
放大器
高电子迁移率晶体管
电气工程
无线
无线电频率
电子工程
噪声系数
混频器
工程类
光电子学
材料科学
电信
晶体管
CMOS芯片
电压
作者
Hiroshi Hamada,Takuya Fujimura,Ibrahim Abdo,Kenichi Okada,Ho-Jin Song,Hiroki Sugiyama,Hideaki Matsuzaki,Hideyuki Nosaka
标识
DOI:10.1109/mwsym.2018.8439850
摘要
This paper presents a 300-GHz transceiver based on 80-nm InP-HEMT technology. To improve the signal-to-noise-and-distortion-ratio (SNDR) characteristics, a high-isolation fundamental mixer is used in which the matching networks are designed for good RF/IF isolation to simultaneously achieve high conversion gain and feasible module packaging. The measured conversion gain of the fabricated mixer module is -15±2 dB, where the LO frequency, IF, and RF are 270, 2-32, and 272-302 GHz. The 300-GHz transceiver consists of the high-isolation mixer, 300-GHz amplifiers, and commercially available frequency multipliers as the LO source. It achieves 100-Gb/s wireless data transmission using 16QAM over a distance of 2.22 m with a 50-dBi antenna. To the best of the authors' knowledge, this is the highest wireless data rate ever achieved using only electronic devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI