光激发
异质结
光电子学
材料科学
联轴节(管道)
宽禁带半导体
氮化镓
图层(电子)
物理
纳米技术
激发
量子力学
冶金
作者
Hong-Quan Nguyen,Abu Riduan Md Foisal,Philip Tanner,Hung D. Nguyen,Sadegh Aberoumand,Van Thanh Dau,Toan Dinh,Sima Dimitrijev,Hoang‐Phuong Phan,Nam‐Trung Nguyen,Dzung Viet Dao
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2022-06-08
卷期号:4 (6): 2648-2655
标识
DOI:10.1021/acsaelm.2c00111
摘要
The incorporation of multiphysics stimuli with traditional sensing effects results in an approach for increasing the sensitivity of mechanical sensors, in particular strain sensing. This paper reports on the giant piezotronic effect in a p-GaN/AlGaN/GaN heterojunction coupled with UV illumination and tuning current that can reach a strain sensitivity of as high as 70680. In comparison to an identical configuration without coupling, this value represents a 100-fold improvement. This sensitivity is one of the greatest for the piezotronic effect in semiconductors that have been documented to date. The intensification of the piezotronic effect in the p-GaN/AlGaN/GaN heterojunctions was ascribed to the formation of a carrier concentration gradient in the AlGaN and GaN layers under UV illumination coupled with the potential-balancing effect by a tuning current. In addition, the result showed a significant improvement in repeatability, stability, and detectable range of the strain sensor utilizing this phenomenon. The ultrahigh sensitivity strain sensing technique will open the way for the establishment of mechanical sensors that are tremendously sensitive, trustworthy, and efficient.
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