块(置换群论)
过程(计算)
计算机科学
CMOS芯片
工艺设计
标准电池
数学优化
过程集成
电子工程
工程类
工艺工程
数学
集成电路
几何学
操作系统
作者
Seungyoung Lee,Sungwook Jung,Young‐Chan Jang,Jungho Do,Jisu Yu,Hyeoungyu You,Minjae Jeong,Jinyoung Lim,Jiyun Han,Sangdo Park,Yongdeok Kim,Jung-Min Kwon,Hoonki Kim,Seiseung Yoon
标识
DOI:10.23919/vlsitechnologyandcir57934.2023.10185417
摘要
The challenge in designing a modern process beyond 3nm is that scaling is no longer based on incremental change purely at the process level [1]. In facing end of Moore’s Law, we need to find out novel innovative ideas to reduce the gap between reality and Moore’s Law trend as shown Fig. 1. In this paper, we introduce breakthrough design technology co-optimization knobs to maximize block-level PPA for advanced CMOS technology. Through these knobs, we improve Fmax +3.6% and block area -14.8% with back-side power delivery network (BSPDN). Furthermore, through the standard cell variants, block area is reduced up to -2.4% and block performance is improved about +1.6%
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