High-k dielectric based high performance vertical organic thin film transistor for flexible low power applications

Abstract The basic performance parameters such as threshold voltage, drain current and saturation mobility play an important role for any transistor-based devices. The planar organic TFT provides a good performance but it is still not satisfactory. Therefore, in this paper, a vertical channel TFT (D 5 ) is proposed that exhibits a significant improvement for threshold voltage V t , drain current I Dmax and saturation mobility μ sat in comparison to planar devices. The proposed vertical device (D 5 ) is 44 and 24 times enhanced in comparison with planar device D 1 in terms of I Dmax and μ sat , correspondingly. Furthermore, this paper compares five different vertical-channel device architectures (D 2 , D 3 , D 4 , D 5 , D 6 & D 7 ). Out of these structures, our proposed novel structure (D 5 ) shows remarkable performance in terms of drain current (528 μ A) and saturation mobility (80.8 cm 2 /V.s). As compared to the best mentioned vertical devices D 2 , D 3 and D 7 , the proposed device exhibits 41.8 %, 15.6 % and 27.8 %, increment in drain current, respectively. Additionally, the proposed device exhibits about 2.7, 5.2 and 3.5 times improvement in comparison with D 2 , D 3 and D 7 correspondingly. The reasons for this better performance of the proposed device have been explained by vertical and horizontal cutline analysis.