偏压
瞬态响应
电源抑制比
控制理论(社会学)
放大器
回转率
物理
电压
拓扑(电路)
电子工程
电气工程
计算机科学
工程类
CMOS芯片
人工智能
控制(管理)
作者
Hua Fan,Lang Feng,Xiaopeng Diao,Xiuhua Xie,Ce Wang,Li Guo,Qi Wei,Fei Qiao,Quanyuan Feng,Edoardo Bonizzoni
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2023-11-01
卷期号:71 (4): 1764-1768
被引量:7
标识
DOI:10.1109/tcsii.2023.3329247
摘要
This brief presents a fast transient LDO with high power supply rejection ratio (PSRR) over 100-kHz based on adaptive biasing, dynamic biasing technique and a current mode feed-forward amplifier (CMFFA). The dynamic biasing improves the load transient response and the adaptive biasing benefits the loop stability. The CMFFA introduces a left-half-plane zero to compensate for the non-dominant pole without large current consumption. Moreover, a impedance adaptive circuit is also used in this design: it ensures the DC gain and pushes a non-dominant pole to high frequency. Through these methods, the proposed LDO is stable over full load range, from 0mA to 150mA, it achieves fast transient response and high PSRR with a low quiescent current. The LDO is fabricated in a 0.6- $\mu $ m CMOS technology. The output voltage can be regulated from 1.8V to 3.3V and the load capacitance is 1 $\mu $ F. For a 150mA load step and a 3.3V output voltage, the maximum undershoot voltage is 38.6mV. At maximum load condition, a 41dB PSRR is achieved at 100-kHz and the loop gain bandwidth product is 1.9MHz. The DC gain is around 70dB over the full load range. The measured load regulation and line regulation are 0.06mV/mA and 1mV/V, respectively. The LDO has a minimum quiescent current of 9.6 $\mu $ A without load. Finally, the proposed LDO achieves a FOM1 of 16.47ps and a FOM2 of 123.52 $\mu $ V.
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