材料科学
色散位移光纤
光学
光放大器
光电子学
保偏光纤
光纤
放大器
光纤传感器
物理
激光器
CMOS芯片
标识
DOI:10.54097/hset.v46i.7710
摘要
In today’s world of communication and rapid growth in demand, erbium-doped optical fiber amplifiers only cover the C-band and L-band wavelengths, and only a small portion of these wavelengths are used. While the O, E, S, and U-bands are not fully utilized and developed to meet the increasing demand for optical fiber communication networks. Bismuth-doped fiber-optic amplifiers can produce broadband light sources and fiber-optic amplifiers due to their ultra-broadband near-infrared radiation properties, thus solving the problem of communication transmission needs. This essay will examine the fiber amplifier doped with Bismuth. This paper focuses on the excitation-emission theory as well as the working principle and process of the fiber-optic amplifier. Meanwhile, this study establishes the optical gain model of the Bismuth-doped fiber amplifier and uses numerical simulation with MATLAB. The signal light works in the wavelength band of 1700-1800nm, and the optimal fiber gain under various conditions is obtained. From this, the maximum gain of the fiber is found to be about 39dB. Bismuth-doped fiber can act as an active carrier for a new kind of continuous wave laser, and the spectral range from 1700 to 1800 nm can be employed with the Bismuth-doped fiber amplifier.
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