材料科学
氮化碳
X射线光电子能谱
带隙
石墨氮化碳
半导体
光电子学
碳纤维
氮化物
薄膜
石墨
光谱学
直接和间接带隙
纳米技术
化学工程
化学
复合材料
复合数
光催化
有机化学
催化作用
工程类
物理
量子力学
图层(电子)
作者
Gerardo Algara‐Siller,Nikolai Severin,Samantha Y. Chong,Torbjörn Björkman,Robert G. Palgrave,Andrea Laybourn,Markus Antonietti,Yaroslav Z. Khimyak,Arkady V. Krasheninnikov,Jürgen P. Rabe,Ute Kaiser,Andrew I. Cooper,Arne Thomas,Michael J. Bojdys
标识
DOI:10.1002/anie.201402191
摘要
Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.
科研通智能强力驱动
Strongly Powered by AbleSci AI