材料科学
纳米技术
透射电子显微镜
原子单位
阴极射线
二硫化钼
电子束处理
铋
光电子学
辐照
电子
复合材料
量子力学
物理
核物理学
冶金
作者
Yuting Shen,Tao Xu,Xiao-Dong Tan,Longbing He,Kuibo Yin,Neng Wan,Litao Sun
标识
DOI:10.1002/adma.201705954
摘要
Abstract Molybdenum disulfide (MoS 2 ) and bismuth telluride (Bi 2 Te 3 ) are the two most common types of structures adopted by 2D chalcogenides. In view of their unique physical properties and structure, 2D chalcogenides have potential applications in various fields. However, the excellent properties of these 2D crystals depend critically on their crystal structures, where defects, cracks, holes, or even greater damage can be inevitably introduced during the preparation and transferring processes. Such defects adversely impact the performance of devices made from 2D chalcogenides and, hence, it is important to develop ways to intuitively and precisely repair these 2D crystals on the atomic scale, so as to realize high‐reliability devices from these structures. Here, an in situ study of the repair of the nanopores in MoS 2 and Bi 2 Te 3 is carried out under electron beam irradiation by transmission electron microscopy. The experimental conditions allow visualization of the structural dynamics of MoS 2 and Bi 2 Te 3 crystals with unprecedented resolution. Real‐time observation of the healing of defects at atomic resolution can potentially help to reproducibly fabricate and simultaneously image single‐crystalline free‐standing 2D chalcogenides. Thus, these findings demonstrate the viability of using an electron beam as an effective tool to precisely engineer materials to suit desired applications in the future.
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