校准
氢
晶体管
电阻器
材料科学
航程(航空)
限制
光电子学
热的
表征(材料科学)
化学
纳米技术
物理
电气工程
工程类
热力学
电压
机械工程
有机化学
量子力学
复合材料
作者
S. L. Miller,K.L. Hughes,Jesús Rodríguez,P. J. McWhorter
出处
期刊:STIN
日期:1994-06-01
卷期号:95: 14146-
被引量:1
摘要
Crucial to the successful implementation of hydrogen sensing devices is the basic ability to quantitatively relate hydrogen concentration to the time-dependent electrical signals originating from the sensing structures, i.e. the sensor must be calibrated. A simple technique is developed for calibrating the resistor sensing structure for time-varying thermal environments and hydrogen concentrations in excess of {approximately}1%. A procedure to achieve equilibrium calibration of the transistor for hydrogen concentrations less than {approximately}1% is also presented. The rate limiting mechanisms governing the time-dependent response of the transistor are investigated. The evolution of hydrogen out of the transistor structure is shown to be thermally activated, and has been accurately modeled for a wide range of time-dependent thermal environments.
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